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Freescale Semiconductor Technical Data
Document Number: MRF9030 Rev. 7, 9/2008
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFET
Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. * Typical Two - Tone Performance at 945 MHz, 26 Volts Output Power -- 30 Watts PEP Power Gain -- 19 dB Efficiency -- 41.5% IMD -- - 32.5 dBc
MRF9030LSR1
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Features * Integrated ESD Protection * Designed for Maximum Gain and Insertion Phase Flatness * Excellent Thermal Stability * * * * Characterized with Series Equivalent Large - Signal Impedance Parameters Low Gold Plating Thickness on Leads. L Suffix Indicates 40 Nominal. RoHS Compliant In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 inch Reel.
CASE 360C - 05, STYLE 1 NI - 360S
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Case Operating Temperature Operating Junction Temperature Symbol VDSS VGS PD Tstg TC TJ Characteristic Thermal Resistance, Junction to Case Symbol RJC Value - 0.5, +68 - 0.5, + 15 117 0.67 - 65 to +150 150 200 Unit Vdc Vdc W W/C C C C
Table 2. Thermal Characteristics
Value 1.5 Unit C/W
Table 3. ESD Protection Characteristics
Test Conditions Human Body Model Machine Model Class 1 (Minimum) M1 (Minimum)
(c) Freescale Semiconductor, Inc., 2008. All rights reserved.
MRF9030LSR1 1
RF Device Data Freescale Semiconductor
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* Capable of Handling 10:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts CW Output Power
945 MHz, 30 W, 26 V LATERAL N - CHANNEL BROADBAND RF POWER MOSFET
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 100 Adc) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 250 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 0.7 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 2 Adc) Dynamic Characteristics Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 49.5 26.5 1 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 2.9 3.8 0.19 3 4 -- 0.4 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
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(continued)
MRF9030LSR1 2 RF Device Data Freescale Semiconductor
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Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) (continued)
Characteristic Functional Tests (In Freescale Test Fixture, 50 ohm system) Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 945.0 MHz, f2 = 945.1 MHz) Gps 18 19 -- dB Symbol Min Typ Max Unit
37
41.5
--
%
IMD
--
- 32.5
- 28
dBc
IRL
--
- 15.5
-9
dB
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Two - Tone Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Two - Tone Drain Efficiency (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) 3rd Order Intermodulation Distortion (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Input Return Loss (VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA, f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz, f2 = 960.1 MHz) Power Output, 1 dB Compression Point (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Common - Source Amplifier Power Gain (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz) Drain Efficiency (VDD = 26 Vdc, Pout = 30 W CW, IDQ = 250 mA, f1 = 945.0 MHz)
Gps
--
19
--
dB
--
41.5
--
%
IMD
--
- 33
--
dBc
IRL
--
- 14
--
dB
P1dB
--
30
--
W
Gps
--
19
--
dB
--
60
--
%
MRF9030LSR1 RF Device Data Freescale Semiconductor 3
ARCHIVE INFORMATION
VGG + C7
B1
B2
VDD
+ C8 C14 C15
+ C16
+ C17
L1 RF INPUT
C5
C9
L2 RF OUTPUT
Z1 C1
Z2
Z3
Z4
Z5
Z6
Z7
DUT
Z8
Z9
Z10
Z11
Z12 C13
Z13
C2
C3
C4
C6
C10
C11
C12
ARCHIVE INFORMATION
B1 B2 C1, C8, C13, C14 C2, C4 C3 C5, C6 C7, C15, C16 C9, C10 C11 C12 C17 L1, L2 Z1 Z2
Short Ferrite Bead Long Ferrite Bead 47 pF Chip Capacitors 0.8 pF to 8.0 pF Trim Capacitors 3.9 pF Chip Capacitor 7.5 pF Chip Capacitors 10 F, 35 V Tantalum Capacitors 10 pF Chip Capacitors 9.1 pF Chip Capacitor 0.6 pF to 4.5 pF Trim Capacitor 220 F, 50 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 0.260 x 0.060 Microstrip 0.240 x 0.060 Microstrip
Z3 Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11 Z12 Z13 PCB
0.500 x 0.100 Microstrip 0.215 x 0.270 Microstrip 0.315 x 0.270 Microstrip 0.160 x 0.270 x 0.520, Taper 0.285 x 0.520 Microstrip 0.450 x 0.270 Microstrip 0.140 x 0.270 Microstrip 0.250 x 0.060 Microstrip 0.720 x 0.060 Microstrip 0.490 x 0.060 Microstrip 0.290 x 0.060 Microstrip Taconic RF - 35 - 0300, 30 mil, r = 3.55
Figure 1. 945 MHz Broadband Test Circuit Schematic
C7 VDD VGG C8 C9 L1 RF INPUT C1 C2 C3 C5 C4 C6 C14 L2 C15 C16
C17
C13 CUT OUT AREA C10 C11 C12
RF OUTPUT
MRF9030 900 MHz Rev-02
Freescale has begun the transition of marking Printed Circuit Boards (PCBs) with the Freescale Semiconductor signature/logo. PCBs may have either Motorola or Freescale markings during the transition period. These changes will have no impact on form, fit or function of the current product.
Figure 2. 945 MHz Broadband Test Circuit Component Layout
MRF9030LSR1 4 RF Device Data Freescale Semiconductor
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TYPICAL CHARACTERISTICS
Gps VDD = 26 Vdc Pout = 30 W (PEP) IDQ = 250 mA Two-Tone, 100 kHz Tone Spacing , DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 20 19 G ps , POWER GAIN (dB) 18 17 16 15 14 13 12 930 IMD IRL 50 45 40 35 -30 -32 -34 -36 -38 960
-10 -12 -14 -16 -18
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f, FREQUENCY (MHz)
Figure 3. Class AB Broadband Circuit Performance
20 19.5 G ps , POWER GAIN (dB) 19 18.5 18 17.5 17 1 10 Pout, OUTPUT POWER (WATTS) PEP VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz 100 IDQ = 375 mA
-20
VDD = 26 Vdc f1 = 945 MHz, f2 = 945.1 MHz
300 mA 250 mA 200 mA
-30 IDQ = 200 mA -40 300 mA -50 375 mA -60 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 250 mA
Figure 4. Power Gain versus Output Power
Figure 5. Intermodulation Distortion versus Output Power
22 60 VDD = 26 Vdc IDQ = 250 mA f = 945 MHz 50 40 30 20 10 0 1 10 100 Pout, OUTPUT POWER (WATTS) AVG.
IMD, INTERMODULATION DISTORTION (dBc)
0 -10 -20 -30 -40 -50 5th Order -60 -70 1 7th Order 10 Pout, OUTPUT POWER (WATTS) PEP 100 3rd Order VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz G ps , POWER GAIN (dB)
20 18 16 14 12 10 0.1
Figure 6. Intermodulation Distortion Products versus Output Power
Figure 7. Power Gain and Efficiency versus Output Power
MRF9030LSR1 RF Device Data Freescale Semiconductor 5
, DRAIN EFFICIENCY (%)
Gps
ARCHIVE INFORMATION
935
940
945
950
955
IMD, INTERMODULATION DISTORTION (dBc)
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc) 20 Gps 18 G ps , POWER GAIN (dB) 16 14 12 10 8 IMD VDD = 26 Vdc IDQ = 250 mA f1 = 945 MHz, f2 = 945.1 MHz 40 20 0 -20 -40 -60 Pout, OUTPUT POWER (WATTS) PEP 60
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Figure 8. Power Gain, Efficiency and IMD versus Output Power
1010 MTTF FACTOR (HOURS X AMPS2)
109
108
107 90 100 110 120 130 140 150 160 170 180 190 200 210 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 9. MTTF Factor versus Junction Temperature
MRF9030LSR1 6 RF Device Data Freescale Semiconductor
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1
10
100
ARCHIVE INFORMATION
Zo = 5 Zsource f = 930 MHz Zload f = 930 MHz f = 960 MHz f = 960 MHz
VDD = 26 V, IDQ = 250 mA, Pout = 30 W PEP f MHz 930 945 960 Zsource 1.34 - j0.1 1.36 - j0.2 1.4 - j0.14 Zload 3.175 + j0.09 3.1 + j0.08 3.0 + j0.05
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 10. Series Equivalent Source and Load Impedance
MRF9030LSR1 RF Device Data Freescale Semiconductor 7
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PACKAGE DIMENSIONS
A B
(FLANGE)
A
1 NOTES: 1. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY.
(FLANGE)
B
2 2X
D
M
2X
K
M
bbb
TA
M
B
(LID)
R
ccc
(LID)
M
TA
M
B F
M
N
H
M
ccc
TA
M
B
M
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E C PIN 3 bbb
M (INSULATOR)
S
(INSULATOR)
M
T
M
SEATING PLANE M
aaa
M
TA
M
B
M
TA
B
CASE 360C - 05 ISSUE E NI - 360S MRF9030LSR1
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MRF9030LSR1 8 RF Device Data Freescale Semiconductor
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DIM A B C D E F H K M N R S aaa bbb ccc
INCHES MIN MAX 0.375 0.385 0.225 0.235 0.105 0.155 0.210 0.220 0.035 0.045 0.004 0.006 0.057 0.067 0.085 0.115 0.355 0.365 0.357 0.363 0.227 0.23 0.225 0.235 0.005 REF 0.010 REF 0.015 REF
MILLIMETERS MIN MAX 9.53 9.78 5.72 5.97 2.67 3.94 5.33 5.59 0.89 1.14 0.10 0.15 1.45 1.70 2.16 2.92 9.02 9.27 9.07 9.22 5.77 5.92 5.72 5.97 0.13 REF 0.25 REF 0.38 REF
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 7 Date Sept. 2008 Description * Data sheet revised to reflect part status change, p. 1, including use of applicable overlay. * Data sheet archived. Parts no longer manufactured. * Added Revision History, p. 9
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MRF9030LSR1 RF Device Data Freescale Semiconductor 9
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How to Reach Us:
Home Page: www.freescale.com
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MRF9030LSR1
Rev. 10 7, 9/2008 Document Number: MRF9030
RF Device Data Freescale Semiconductor
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